Peer-reviewed Publications and arXiv pre-prints:

2022:


Benchmarking adversarially robust quantum machine learning at scale

Maxwell West, Sarah Erfani, Christopher Leckie, Martin Sevior, Lloyd Hollenberg, Muhammad Usman

submitted (2022); arXiv

Direct observation of narrow electronic energy band formation in 2D molecular self-assembly

Jack Hellerstedt, Marine Castelli, Anton Tadich, ..., Muhammad Usman, Agustin Schiffrin

Nanoscale Advances 4, 3845, (2022); DOI

Comparative analysis of error mitigation techniques for variational quantum eigensolver implementation on IBM quantum systems

Shaobo Zhang, Charles D. Hill, Muhammad Usman

submitted (2022); arXiv

Performance analysis of coreset selection for quantum implementation of K-Means clustering problem

Fanzhe Qu, Sarah M. Erfani, Muhammad Usman

submitted (2022); arXiv

QFaaS: a serverless function-as-a-service framework for quantum computing

Hoa T. Nguyen, Muhammad Usman, Rajkumar Buyya

submitted (2022); arXiv

Automated quantum circuit design with nested monte carlo tree search

Peiyong Wang, Muhammad Usman, Lloyd C.L. Hollenberg, Casey Myers

submitted (2022); arXiv


Framework for donor qubit spatial metrology in silicon with depths approaching the bulk limit

Maxwell T. West, Muhammad Usman

Physical Review Applied 17, 024070, (2022);


A fast and scalable artificial neural network syndrome decoder for surface codes

Spiro Gicev, Lloyd Hollenberg, Muhammad Usman

submitted (2022); arXiv


A silicon qubit platform for in situ single molecule structure determination

Viktor S. Perunicic, Muhammad Usman, Charles D. Hill, Lloyd C.L. Hollenberg

submitted (2022); arXiv


An exchange-based surface-code quantum computer in silicon

Charles D. Hill, Muhammad Usman, Lloyd C.L. Hollenberg

submitted (2022); arXiv


Valley population of donor states in highly strained silicon

Benoit Voisin, Kevin Ng, Joe Salfi, Muhammad Usman, C. Wong, ..., Lloyd C.L. Hollenberg, Sven Rogge

IOP Materials for Quantum Technology 2, 025002, (2022); arXiv

2021:


Influence of momentum space features on scanning tunnelling microscope measurements

Maxwell T. West, Muhammad Usman

Nanoscale (communications) 13, 16070, (2021); arXiv


Quantum computing: A taxonomy, systematic review and future directions

S. S. Gill, A. Kumar, H. Singh, M. Singh, K. Kaur, Muhammad Usman, Rajkumar Buyya

Wiley Software: Practice and Experience 52, 66-114, (2021); arXiv


Long-range surface-assisted molecule-molecule hybridisation

Marina Castelli, Jack Hellerstedt, Cornelius Krull, Spiro Gicev, Lloyd Hollenberg, Muhammad Usman, Agustin Schiffrin

Small 17, 2005974, (2021); arXiv

FLEET Press Release Article: Harnessing Socially-Distant Molecular-Interactions for Future Computing


Recent progress in atomistic modelling and simulations of donor spin qubits in silicon

Muhammad Usman

(2020 Rising Stars, Elsevier) Computational Materials Science, 193, 110280, (2021)


Bismuth-containing GaAs core-shell nanowires

Muhammad Usman

In proceedings of 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2021 (DOI)

2020:

Tunable band-gap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires

Muhammad Usman

Nanoscale, 12, 20973, (2020); arXiv

Pursuit Article: The Nanowires Building Greener Nanodevices

Epitaxial growth of SiC on (100) Diamond

A. Tsai, A. Aghajamali, N. Dontschuk, B.C. Johnson, M. Usman, ..., L. Hollenberg, J.C. McCallum, S. Rubanov, A. Tadich, N.A. Marks, A. Stacey

ACS Applied Electronic Materials 2, 2003, (2020); arXiv

Highlighted with Journal Cover Page: Volume 2, Issue 7, July 28, 2020


Valley interference and spin exchange at the atomic scale in silicon

Benoit Voisin+, Juanita Bocquel+, Archana Tankasala+, Muhammad Usman+, Joe Salfi, Rajib Rahman, Michelle Y. Simmons, Lloyd Hollenberg, Sven Rogge

(+These authors contributed equally)

Nature Communications 11, 6124 (2020); arXiv

Press release: Researchers map electrons to move one step closer to better quantum computers


Polarisation independent ground state optical transitions in closely stacked InAs/GaAs columnar quantum dots

Muhammad Usman, (2020); arXiv


Framework for atomic-level characterisation of quantum computer arrays by machine learning

Muhammad Usman, Yi Z. Wong, Charles D. Hill, Lloyd C.L. Hollenberg,

(NPJ) Computational Materials 6, 19, (2020); arXiv

Pursuit Article: Machine learning to scale up the quantum computer

Phys.org: https://phys.org/news/2020-03-machine-scale-quantum.html

Futurity.org: https://www.futurity.org/quantum-computers-machine-learning-2309802/

Engineers Australia: https://www.createdigitalmagazine.org.au/machine-learning-qubits/

Australian Online News: https://australianonlinenews.com.au/2020/03/16/machine-learning-to-scale-up-the-quantum-computer-pursuit/

2019:


Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs core-shell nanowires

Muhammad Usman,

(RSC) Nanoscale, 11, 20133 (2019); arXiv


Atomistic tight binding study of quantum confined Stark effect in GaBiAs/GaAs quantum wells

Muhammad Usman

(IOP) J. Phys.:Condens. Matter. 31, 415503, (2019); arXiv


Unusual band-gap bowing in highly mismatched ZnOS alloy: Atomistic tight-binding band anti-crossing model

Saad M. Alqahtani, Muhammad Usman, Shaikh S. Ahmed

Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices. (AIP) J. of Applied Physics 125, 235704, (2019)

2018:


Measurements and atomistic theory of electron g factor anisotropy for phosphorus donors in strained silicon

Muhammad Usman, Hans Huebl, Andre Stegner, Charles D Hill, Martin S Brandt, Lloyd C.L. Hollenberg

(APS) Physical Review B 98, 035432, (2018); arXiv


Impact of disorder on the optoelectronic properties of GaBiNAs alloys and heterostructures

Muhammad Usman, Christopher A. Broderick, and Eoin P. O'Reilly

(APS) Physical Review Applied 10, 044024, (2018); arXiv


Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells

Muhammad Usman

(APS) Physical Review Materials 2, 044602, (2018); arXiv


Valley filtering and spatial maps of coupling between silicon donors and quantum dots

Joe Salfi, Benoit Voisin, Archana Tankasala, Juanita Bocquel, Muhammad Usman, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Rajib Rahman, Sven Rogge

(APS) Physical Review X, 8, 031049, (2018); arXiv


Two-electron states of a group V donor in silicon from atomistic full configuration interaction

Archana Tankasala, Joe Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Sven Rogge, Rajib Rahman

(APS) Physical Review B, 97, 195301, (2018); arXiv

2017:


Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Muhammad Usman, Benoit Voisin, Joe Salfi, Sven Rogge, Lloyd C.L. Hollenberg

(RSC) Nanoscale 9, 17013, (2017); arXiv

2016:


Spatial metrology of dopants in silicon with exact lattice site precision

Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg

Nature Nanotechnology 11, 763-768, (2016); arXiv [Highlighted by editor in TOC of Nature Nanotechnology September 2016 Issue]

Related news articles at Phys.org, Futurism, ScienceDaily, EurekAlert!, Bharattimes, newswise, nano, University of Melbourne Newsroom, UNSW News, Scimex, Technology, Opli

2015:


Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules

Muhammad Usman

(RSC) Nanoscale 7, 16516, (2015); arXiv


Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg

(APS) Physical Review B 91, 245209, (2015); arXiv


Donor hyperfine Stark shift and the role of central-cell correction in tight-binding theory

Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd C.L. Hollenberg

INVITED Special Issue Article: (IOP) Journal of Physics: Condensed-Matter, 27, 154207, (2015); arXiv

Link to the special issue (Single Dopants in Semiconductors) is here


Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarisation fields

Shaikh S. Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman

(Springer) Journal of Computational Electronics, Vol. 14, Issue 2, pp 543-556, (2015);


Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D

S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, ..., F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck

(Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, (2015). [DOI: 10.1007/978-3-642-27737-5_343-2]

2014:


Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks

Muhammad Usman

Rapid Communications: (APS) Physical Review B, 89, 081302(R), (2014); arXiv


Tuning of polarisation sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

Vittorianna Tasco*, Muhammad Usman*, Milena De Giorgi, Adriana Passaseo - (*Authors with equal contributions)

(IOP) Nanotechnology, 25, 055207, (2014); arXiv


Anisotropic electron g-factor as a probe of the electronic structure of GaBiAs/GaAs epilayers

Christopher A. Broderick, Simone Mazzucato, Helene Carrere,Thierry Amand, ..., Muhammad Usman, Eoin P. O'Reilly, Xavier Marie

(APS) Physical Review B 90, 195301, (2014); arXiv


Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells

Muhammad Usman and Eoin P. O'Reilly

(AIP) Applied Physics Letters, 104, 071103, (2014); arXiv


Electrically Injected GaAsBi Quantum Well Lasers

SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, ..., M Usman, PE Harnedy, EP OReilly, R Butkute, V Pacebutas, A Geiutis, A Krotkus

in proceedings of 24th International Semiconductor Laser Conference (ISLC), September 2014, Melia Palas Atenea, Palma de Mallorca, Spain.

2013:


Impact of alloy disorder on the band structure of compressively strained GaBiAs

Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Jeff Hosea, Stephen Sweeney, and Eoin P. O'Reilly

(APS) Physical Review B, 87, 115104, 2013; arXiv


Derivation of 12 and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors

Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly

(IOP) Semicond. Sci. Technol., 28, 125025, (2013); arXiv


12-band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations

Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly

(INVITED PAPER @ E-MRS 2012)(Wiley) Physica Status Solidi (b) 250, 773-778, (2013); arXiv


Analysis of the influence of IJEEE on electrical engineering and electrical engineering education

Sadia Nawaz, Muhammad Usman, and Johannes Strobel

International Journal of Electrical Engineering Education (IJEEE), 50th Anniversary Special Issue, Vol. 50, No. 3, Pages: 316-340, 2013, Manchester University Press.

2012:


Band engineering in dilute nitride and bismide semiconductor Lasers

Christopher A. Broderick, Muhammad Usman, Stephen J. Sweeney, and Eoin P. O'Reilly

(INVITED REVIEW ARTICLE) (IOP) Semicond. Sci. Technol. 27, 094011 (2012); arXiv

Selected by IOP Editors as a highlighted research article of Year 2012: http://iopscience.iop.org/0268-1242/page/2012%20Highlights


Polarisation response in InAs QDs: Theoretical correlation between composition and electronic properties

Muhammad Usman, Vittorianna Tasco, Maria T. Todaro, Melina D. Giorgi, Eoin P. O'Reilly, Gerhard Klimeck, Adriana Passaseo

(IOP) Nanotechnology 23, 165202, (2012); arXiv

Selected by the editor to be spotlighted on nanotechweb.org website: Quantum dot model analyses the influence of intermixing and segregation effects on polarization properties

Spotlighted in lab/fab talk on compoundsemiconductor.net website: Multi-million atom simulations and polarisation measurements enable QD metrology


Atomistic theoretical study of electronic and polarisation properties of single and vertically-stacked elliptical InAs quantum dots

Muhammad Usman

(APS) Physical Review B 86, 155444, (2012); arXiv


Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly

in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.


Understanding polarisation properties of InAs QDs by atomistic modeling of growth dynamics

Vittorianna Tasco, Muhammad Usman, Maria T. Todaro, M. De Giorgi, and Adriana Passaseo

in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.

2011:


Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

Muhammad Usman, Christopher A. Broderick, Andrew Lindsay, and Eoin P. O'Reilly

(APS) Physical Review B 84, 245202 (2011); arXiv


Experimental and atomistic theoretical study of degree of polarisation from multilayer InAs/GaAs quantum dot stacks

Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and Takashi Kita

(APS) Physical Review B 84, 115321 (2011); arXiv


In-plane polarisation anisotropy of ground state optical intensity in InAs/GaAs quantum dots

Muhammad Usman

(AIP) Journal of Applied Physics 110, 094512, (2011)


Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck

(AIP) J. of Applied Physics 109, 104510 (2011); arXiv


Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

Muhammad Usman*, Yui H.M. Tan*, Hoon Ryu, Sheikh Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck - (*Authors with equal contributions)

(IOP) Nanotechnology 22, 315709 (2011); arXiv

Highlighted on nanotechweb as Editor's chioce: Supercomputers model real-world quantum dot devices atom-by-atom


Tight Binding Analysis of the Electronic Structure of Dilute Bismide and Nitride Alloys of GaAs

Christopher A. Broderick, Muhammad Usman, Andrew Lindsay, and Eoin P. O'Reilly

in proceedings of 13th IEEE International Conference on Transparent Optical Networks (ICTON), June 26-30, (2011), KTH Stockholm, Sweden;

2010 and earlier:


Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

Muhammad Usman, Hoon Ryu, Insoo Woo, David Ebert, Gerhard Klimeck

IEEE Transactions on Nanotechnology, 8, 330, (2009); arXiv


Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D Part II: Applications

Gerhard Klimeck, Sheikh Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, Marta Parda, and Timothy Boykin

(INVITED ARTICLE) IEEE Transactions on Electron Devices, Vol. 54, No. 9, 2090-2099, (2007)


Atomistic Simulation of Non-Degeneracy and Optical Polarisation Anisotropy in Pyramidal Quantum Dots

Sheikh Ahmed, Muhammad Usman, Rajib Rahman, Andrei Schliwa, Gerhard Klimeck

in Technical Proceedings of IEEE Nano/Micro Engineered and Molecular Systems (NEMS) 2008


A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots

Muhammad Usman, Sheikh Ahmed, Gerhard Klimeck

in Technical Proceedings of IEEE Nanotechnology (NANO) 2008, Arlington TX


Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots

Muhammad Usman, Hoon Ryu, Sunhee Lee, Yui M.H. Tan, and Gerhard Klimeck

in proceedings of 13th International Workshop on Computational Electronics (IWCE), Tsinghua University, Beijing, May 27-29 2009.


Strain-engineered self-organised InAs/GaAs quantum dots for long wavelength applications

Muhammad Usman, Dragica Vasileska, and Gerhard Klimeck

in proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008.


Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

Shaikh Ahmed, Muhammad Usman, Clemens Heitzinger. Rajib Rahman, Andrei Schliwa, and Gerhard Klimeck

in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849.


Strain and electronic structure interactions in realistically scaled quantum dot stacks

Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard Klimeck

in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg. 847.


Performance analysis of adaptive source rate control (ASRC) algorithm for VoIP

Muhammad Usman and Noor M. Sheikh

in proceedings of IEEE TENCON 2005 conference Melbourne Australia, November 2005 Pages:1-7