Public Profiles: Google Scholar Profile: https://scholar.google.com.au/citations?user=v-UffdMAAAAJ&hl=en Researcher ID: https://publons.com/researcher/2748584/muhammad-usman/ Invited Talks/Colloquia/Seminars: A complete list of invited talks is available here: http://www.quantumelectronics.org/publications/invitedtalks Contributed Talks: A complete list of contributed talks in international conferences and workshops is available here: http://www.quantumelectronics.org/publications/contributedtalks Patents:
Quantum computer arrays, Lloyd Hollenberg, Charles Hill, and Muhammad Usman, patent # 2018903094,
2018.
Automated determination of locations of dopant atoms, Lloyd Hollenberg, Muhammad Usman, Yi Zheng Wong, patent # 2019900677, 2018
Book Chapters: Shaikh S. Ahmed*, Neerav Kharche*, Rajib Rahman*, Muhammad Usman*, Sunhee Lee, ..., Timothy Boykin, and Gerhard Klimeck, (*Authors with equal contributions) Book Title: Encyclopedia of Complexity and Systems Science (ISBN: 978-0-3873-0440-3); Publisher: Springer New York; Editor: Robert A. Meyers; Volume 6, pages 5745-5783, 2009. Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly Chapter 3; Book Title: "Bismuth-containing Compounds" (ISBN: 978-1-4614-8121-8); Springer New York, Series in Materials Science; Volume 186, Pages: 55-88, 2013. Muhammad Usman Chapter 5; Book Title: "Quantum Dot Molecules" (ISBN: 978-1-4614-8129-4); Springer New York, Lecture Notes in Nanoscale Science & Technology; ; Volume 14, Pages: 149-175, 2014. S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck,
(Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, 2015. [DOI: 10.1007/978-3-642-27737-5_343-2] 2019 A. Tsai, A. Aghajamali, N. Dontschuk, B. C. Johnson, N.A. Marks, M. Usman, A. Schenk, M. Sear, C.I. Pakes, L. Hollenberg, J.C. McCallum, S. Rubanov, A. Tadich, A. Stacey, (2019) Valley interference and spin exchange at the atomic scale in silicon B. Voisin+, J. Bocquel+, A. Tankasala*, M. Usman*, J. Salfi, R. Rahman, M.Y. Simmons, L.C.L. Hollenberg, S. Rogge (+*Equal contribution authors), submitted (2019) Atomic-level characterisation of quantum computer arrays by machine learning Muhammad Usman, Yi Z. Wong, Charles D. Hill, Lloyd C.L. Hollenberg, submitted (2019) Charles D. Hill, Muhammad Usman, Lloyd C.L. Hollenberg, (2019) Muhammad Usman, Atomistic tight binding study of quantum confined Stark effect in GaBiAs/GaAs quantum wells Muhammad Usman Unusual band-gap bowing in highly mismatched ZnOS alloy: Atomistic tight-binding band anti-crossing model Saad M. Alqahtani, Muhammad Usman, Shaikh S. Ahmed Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices. (AIP) J. of Applied Physics 125, 235704, (2019) 2018 Muhammad Usman, Hans Huebl, Andre Stegner, Charles D Hill, Martin S Brandt, Lloyd C.L. Hollenberg (APS) Physical Review B 98, 035432, (2018); arXiv Impact of disorder on the optoelectronic properties of GaBiNAs alloys and heterostructures Muhammad Usman, Christopher A. Broderick, and Eoin P. O'Reilly (APS) Physical Review Applied 10, 044024, (2018); arXiv Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells Muhammad Usman (APS) Physical Review Materials 2, 044602, (2018); arXiv Joe Salfi, Benoit Voisin, Archana Tankasala, Juanita Bocquel, Muhammad Usman, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Rajib Rahman, Sven Rogge (APS) Physical Review X, 8, 031049, (2018); arXiv Archana Tankasala, Joe Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Sven Rogge, Rajib Rahman (APS) Physical Review B, 97, 195301, (2018); arXiv 2017 Muhammad Usman, Benoit Voisin, Joe Salfi, Sven Rogge, Lloyd C.L. Hollenberg (RSC) Nanoscale 9, 17013, (2017); arXiv 2016 Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg Nature Nanotechnology 11, 763-768, (2016); arXiv [Highlighted by editor in TOC of Nature Nanotechnology September 2016 Issue] Related news articles at Phys.org, Futurism, ScienceDaily, EurekAlert!, Bharattimes, newswise, nano, University of Melbourne Newsroom, UNSW News, Scimex, Technology, Opli 2015 Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules Muhammad Usman (RSC) Nanoscale 7, 16516, (2015); arXiv Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg (APS) Physical Review B 91, 245209, (2015); arXiv Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd C.L. Hollenberg INVITED Special Issue Article: (IOP) Journal of Physics: Condensed-Matter, 27, 154207, (2015); arXiv Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarisation fields Shaikh S. Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman (Springer) Journal of Computational Electronics, Vol. 14, Issue 2, pp 543-556, (2015); Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck, (Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, (2015). [DOI: 10.1007/978-3-642-27737-5_343-2] 2014 Tuning of polarisation sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics Vittorianna Tasco*, Muhammad Usman*, Milena De Giorgi, Adriana Passaseo - (*Authors with equal contributions) (IOP) Nanotechnology, 25, 055207, (2014); arXiv Anisotropic electron g-factor as a probe of the electronic structure of GaBiAs/GaAs epilayers Christopher A. Broderick, Simone Mazzucato, Helene Carrere,Thierry Amand, ..., Muhammad Usman, Eoin P. O'Reilly, Xavier Marie (APS) Physical Review B 90, 195301, (2014); arXiv Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells Muhammad Usman and Eoin P. O'Reilly (AIP) Applied Physics Letters, 104, 071103, (2014); arXiv Electrically Injected GaAsBi Quantum Well Lasers SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, ..., CA Broderick, M Usman, PE Harnedy, EP OReilly, R Butkute, V Pacebutas, A Geiutis, A Krotkus in proceedings of 24th International Semiconductor Laser Conference (ISLC), September 2014, Melia Palas Atenea, Palma de Mallorca, Spain. 2013 Impact of alloy disorder on the band structure of compressively strained GaBiAs Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Jeff Hosea, Stephen Sweeney, and Eoin P. O'Reilly (APS) Physical Review B, 87, 115104, 2013; arXiv Derivation of 12 and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly (IOP) Semicond. Sci. Technol., 28, 125025, (2013); arXiv 12-band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly (INVITED PAPER @ E-MRS 2012)(Wiley) Physica Status Solidi (b) 250, 773-778, (2013); arXiv Analysis of the influence of IJEEE on electrical engineering and electrical engineering education Sadia Nawaz, Muhammad Usman, and Johannes Strobel International Journal of Electrical Engineering Education (IJEEE), 50th Anniversary Special Issue, Vol. 50, No. 3, Pages: 316-340, 2013, Manchester University Press. 2012 Band engineering in dilute nitride and bismide semiconductor Lasers Christopher A. Broderick, Muhammad Usman, Stephen J. Sweeney, and Eoin P. O'Reilly (INVITED REVIEW ARTICLE) (IOP) Semicond. Sci. Technol. 27, 094011 (2012); arXiv Selected by IOP Editors as a highlighted research article of Year 2012: http://iopscience.iop.org/0268-1242/page/2012%20Highlights Polarisation response in InAs QDs: Theoretical correlation between composition and electronic properties Muhammad Usman, Vittorianna Tasco, Maria T. Todaro, Melina D. Giorgi, Eoin P. O'Reilly, Gerhard Klimeck, Adriana Passaseo (IOP) Nanotechnology 23, 165202, (2012); arXiv Selected by the editor to be spotlighted on nanotechweb.org website: Quantum dot model analyses the influence of intermixing and segregation effects on polarization properties Spotlighted in lab/fab talk on compoundsemiconductor.net website: Multi-million atom simulations and polarisation measurements enable QD metrology Atomistic theoretical study of electronic and polarisation properties of single and vertically-stacked elliptical InAs quantum dots Muhammad Usman (APS) Physical Review B 86, 155444, (2012); arXiv Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland. Understanding polarisation properties of InAs QDs by atomistic modeling of growth dynamics Vittorianna Tasco, Muhammad Usman, Maria T. Todaro, M. De Giorgi, and Adriana Passaseo in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland. 2011 Muhammad Usman, Christopher A. Broderick, Andrew Lindsay, and Eoin P. O'Reilly (APS) Physical Review B 84, 245202 (2011); arXiv Experimental and atomistic theoretical study of degree of polarisation from multilayer InAs/GaAs quantum dot stacks Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and Takashi Kita (APS) Physical Review B 84, 115321 (2011); arXiv In-plane polarisation anisotropy of ground state optical intensity in InAs/GaAs quantum dots Muhammad Usman (AIP) Journal of Applied Physics 110, 094512, (2011) Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck (AIP) J. of Applied Physics 109, 104510 (2011); arXiv Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations Muhammad Usman*, Yui H.M. Tan*, Hoon Ryu, Sheikh Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck - (*Authors with equal contributions) (IOP) Nanotechnology 22, 315709 (2011); arXiv Highlighted on nanotechweb as Editor's chioce: Supercomputers model real-world quantum dot devices atom-by-atom Tight Binding Analysis of the Electronic Structure of Dilute Bismide and Nitride Alloys of GaAs Christopher A. Broderick, Muhammad Usman, Andrew Lindsay, and Eoin P. O'Reilly in proceedings of 13th IEEE International Conference on Transparent Optical Networks (ICTON), June 26-30, (2011), KTH Stockholm, Sweden; < 2010 Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data Muhammad Usman, Hoon Ryu, Insoo Woo, David Ebert, Gerhard Klimeck IEEE Transactions on Nanotechnology, 8, 330, (2009); arXiv Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D Part II: Applications Gerhard Klimeck, Sheikh Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, Marta Parda, and Timothy Boykin (INVITED ARTICLE) IEEE Transactions on Electron Devices, Vol. 54, No. 9, 2090-2099, (2007) Atomistic Simulation of Non-Degeneracy and Optical Polarisation Anisotropy in Pyramidal Quantum Dots Sheikh Ahmed, Muhammad Usman, Rajib Rahman, Andrei Schliwa, Gerhard Klimeck in Technical Proceedings of IEEE Nano/Micro Engineered and Molecular Systems (NEMS) 2008 A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots Muhammad Usman, Sheikh Ahmed, Gerhard Klimeck in Technical Proceedings of IEEE Nanotechnology (NANO) 2008, Arlington TX Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots Muhammad Usman, Hoon Ryu, Sunhee Lee, Yui M.H. Tan, and Gerhard Klimeck in proceedings of 13th International Workshop on Computational Electronics (IWCE), Tsinghua University, Beijing, May 27-29 2009. Strain-engineered self-organised InAs/GaAs quantum dots for long wavelength applications Muhammad Usman, Dragica Vasileska, and Gerhard Klimeck in proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008. Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field Shaikh Ahmed, Muhammad Usman, Clemens Heitzinger. Rajib Rahman, Andrei Schliwa, and Gerhard Klimeck in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849. Strain and electronic structure interactions in realistically scaled quantum dot stacks Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard Klimeck in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg. 847. Performance analysis of adaptive source rate control (ASRC) algorithm for VoIP Muhammad Usman and Noor M. Sheikh in proceedings of IEEE TENCON 2005 conference Melbourne Australia, November 2005 Pages:1-7 Best viewed in chrome browser; Copyright © Muhammad Usman, all rights reserved.
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