Patents:

    Quantum computer arrays, Lloyd Hollenberg, Charles Hill, and Muhammad Usman, patent # 2018903094, 
2018.

    Automated determination of locations of dopant atoms, Lloyd Hollenberg, Muhammad Usman, Yi Zheng Wong, patent # 2019900677, 2018


Book Chapters:

    Shaikh S. Ahmed*, Neerav Kharche*, Rajib Rahman*, Muhammad Usman*, Sunhee Lee, ..., Timothy Boykin, and Gerhard Klimeck, (*Authors with equal contributions)
    Book Title: Encyclopedia of Complexity and Systems Science (ISBN: 978-0-3873-0440-3); Publisher: Springer New York; Editor: Robert A. Meyers; Volume 6, pages 5745-5783, 2009. 

    Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly  
    Chapter 3; Book Title: "Bismuth-containing Compounds" (ISBN: 978-1-4614-8121-8); Springer New York, Series in Materials Science; Volume 186, Pages: 55-88, 2013. 

    Muhammad Usman 
    Chapter 5; Book Title: "Quantum Dot Molecules" (ISBN: 978-1-4614-8129-4); Springer New York, Lecture Notes in Nanoscale Science & Technology; ; Volume 14, Pages: 149-175, 2014. 
    
    S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck, 
    (Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, 2015. [DOI: 10.1007/978-3-642-27737-5_343-2]

    Peer-reviewed Publications: 

    2019
          Atomic-level characterisation of quantum computer arrays by machine learning
          Muhammad Usman, Yi Z. Wong, Charles D. Hill, Lloyd C.L. Hollenberg, (2019)  
          Exchange coupling for scalable donor qubits in silicon
          Benoit Voisin, Juanita Bocquel, Archana Tankasala*, Muhammad Usman*, Joe Salfi, Rajib Rahman, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Sven Rogge  
          *(Equal contribution authors), (2019)


          Unusual band-gap bowing in highly mismatched ZnOS alloy: Atomistic tight-binding band anti-crossing model
          Saad M. Alqahtani, Muhammad Usman, Shaikh S. Ahmed
          (AIP) J. of Applied Physics, (2019) 

      2018

          Muhammad Usman, Hans Huebl,  Andre Stegner, Charles D Hill, Martin S Brandt, Lloyd C.L. Hollenberg 
          (APS) Physical Review B 98, 035432, (2018); arXiv

          Impact of disorder on the optoelectronic properties of GaBiNAs alloys and heterostructures 
          Muhammad Usman, Christopher A. Broderick, and Eoin P. O'Reilly
          (APS) Physical Review Applied 10, 044024, (2018); arXiv

          Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells
          Muhammad Usman 
          (APS) Physical Review Materials 2, 044602, (2018); arXiv

          Joe Salfi, Benoit Voisin, Archana Tankasala, Juanita Bocquel, Muhammad Usman, Michelle Y. Simmons, Lloyd C.L. Hollenberg,  Rajib Rahman, Sven Rogge 
          (APS) Physical Review X, 8, 031049, (2018); arXiv

          Archana Tankasala, Joe Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Sven Rogge, Rajib Rahman
          (APS) Physical Review B, 97, 195301, (2018); arXiv

      2017

          Muhammad Usman, Benoit Voisin, Joe Salfi, Sven Rogge, Lloyd C.L. Hollenberg 
          (RSC) Nanoscale 9, 17013, (2017); arXiv

      2016

          Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg 
          Nature Nanotechnology 11, 763-768, (2016); arXiv  [Highlighted by editor in TOC of Nature Nanotechnology September 2016 Issue]
       

      Pinpointing qubits in a silicon quantum computer



      2015


          Strain and electric field control of hyperfine interactions for donor spin qubits in silicon 
          Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg 
          (APS) Physical Review B 91, 245209, (2015); arXiv 

          Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd C.L. Hollenberg 
          INVITED Special Issue Article: (IOP) Journal of Physics: Condensed-Matter, 27, 154207, (2015); arXiv

          Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarisation fields 
          Shaikh S. Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman
          (Springer) Journal of Computational Electronics, Vol. 14, Issue 2, pp 543-556, (2015);

          Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D 
          S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck, 
          (Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, (2015). [DOI: 10.1007/978-3-642-27737-5_343-2]

      2014

          Muhammad Usman 
          Rapid Communications: (APS) Physical Review B, 89, 081302(R), (2014); arXiv

          Tuning of polarisation sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics 
          Vittorianna Tasco*, Muhammad Usman*, Milena De Giorgi, Adriana Passaseo - (*Authors with equal contributions) 
          (IOP) Nanotechnology, 25, 055207, (2014); arXiv

          Anisotropic electron g-factor as a probe of the electronic structure of GaBiAs/GaAs epilayers 
          Christopher A. Broderick, Simone Mazzucato, Helene Carrere,Thierry Amand, ..., Muhammad Usman, Eoin P. O'Reilly, Xavier Marie 
          (APS) Physical Review B 90, 195301, (2014); arXiv 

          Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells 
          Muhammad Usman and Eoin P. O'Reilly 
          (AIP) Applied Physics Letters, 104, 071103, (2014); arXiv 

          Electrically Injected GaAsBi Quantum Well Lasers 
          SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, ..., CA Broderick, M Usman, PE Harnedy, EP OReilly, R Butkute, V Pacebutas, A Geiutis, A Krotkus 
          in proceedings of 24th International Semiconductor Laser Conference (ISLC), September 2014, Melia Palas Atenea, Palma de Mallorca, Spain.

      2013

          Impact of alloy disorder on the band structure of compressively strained GaBiAs 
          Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Jeff Hosea, Stephen Sweeney, and Eoin P. O'Reilly 
          (APS) Physical Review B, 87, 115104, 2013; arXiv 

          Derivation of 12 and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors 
          Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly 
          (IOP) Semicond. Sci. Technol., 28, 125025, (2013); arXiv 

          12-band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations 
          Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly 
          (INVITED PAPER @ E-MRS 2012)(Wiley) Physica Status Solidi (b) 250, No. 4, 773-778, (2013); arXiv 

          Analysis of the influence of IJEEE on electrical engineering and electrical engineering education 
          Sadia Nawaz, Muhammad Usman, and Johannes Strobel 
          International Journal of Electrical Engineering Education (IJEEE), 50th Anniversary Special Issue, Vol. 50, No. 3, Pages: 316-340, 2013, Manchester University Press. 

      2012

          Band engineering in dilute nitride and bismide semiconductor Lasers 
          Christopher A. Broderick, Muhammad Usman, Stephen J. Sweeney, and Eoin P. O'Reilly 
          (INVITED REVIEW ARTICLE) (IOP) Semicond. Sci. Technol. 27, 094011 (2012); arXiv 
          Selected by IOP Editors as a highlighted research article of Year 2012: http://iopscience.iop.org/0268-1242/page/2012%20Highlights

          Polarisation response in InAs QDs: Theoretical correlation between composition and electronic properties 
          Muhammad Usman, Vittorianna Tasco, Maria T. Todaro, Melina D. Giorgi, Eoin P. O'Reilly, Gerhard Klimeck, Adriana Passaseo 
          (IOP) Nanotechnology 23, 165202, (2012); arXiv 
          Selected by the editor to be spotlighted on nanotechweb.org website: Quantum dot model analyses the influence of intermixing and segregation effects on polarization properties 
          Spotlighted in lab/fab talk on compoundsemiconductor.net website: Multi-million atom simulations and polarisation measurements enable QD metrology


          Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models 
          Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly
          in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.

          Understanding polarisation properties of InAs QDs by atomistic modeling of growth dynamics 
          Vittorianna Tasco, Muhammad Usman, Maria T. Todaro, M. De Giorgi, and Adriana Passaseo 
          in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.

      2011

          Muhammad Usman, Christopher A. Broderick, Andrew Lindsay, and Eoin P. O'Reilly 
          (APS) Physical Review B 84, 245202 (2011); arXiv 

          Experimental and atomistic theoretical study of degree of polarisation from multilayer InAs/GaAs quantum dot stacks 
          Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and Takashi Kita 
          (APS) Physical Review B 84, 115321 (2011); arXiv 

          In-plane polarisation anisotropy of ground state optical intensity in InAs/GaAs quantum dots 
          Muhammad Usman 
          (AIP) Journal of Applied Physics 110, 094512, (2011) 

          Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) 
          Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck 
          (AIP) J. of Applied Physics 109, 104510 (2011); arXiv 

          Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations 
          Muhammad Usman*, Yui H.M. Tan*, Hoon Ryu, Sheikh Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck - (*Authors with equal contributions) 
          (IOP) Nanotechnology 22, 315709 (2011); arXiv 
          Highlighted on nanotechweb as Editor's chioce: Supercomputers model real-world quantum dot devices atom-by-atom

          Tight Binding Analysis of the Electronic Structure of Dilute Bismide and Nitride Alloys of GaAs 
          Christopher A. Broderick, Muhammad Usman, Andrew Lindsay, and Eoin P. O'Reilly 
          in proceedings of 13th IEEE International Conference on Transparent Optical Networks (ICTON), June 26-30, (2011), KTH Stockholm, Sweden;

      < 2010

          Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data     
          Muhammad Usman, Hoon Ryu, Insoo Woo, David Ebert, Gerhard Klimeck 
          IEEE Transactions on Nanotechnology, 8, 330, (2009); arXiv 

          Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D Part II: Applications 
          Gerhard Klimeck, Sheikh Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, Marta Parda, and Timothy Boykin 
          (INVITED ARTICLE) IEEE Transactions on Electron Devices, Vol. 54, No. 9, 2090-2099, (2007) 

          Atomistic Simulation of Non-Degeneracy and Optical Polarisation Anisotropy in Pyramidal Quantum Dots 
          Sheikh Ahmed, Muhammad Usman, Rajib Rahman, Andrei Schliwa, Gerhard Klimeck 
          in Technical Proceedings of IEEE Nano/Micro Engineered and Molecular Systems (NEMS) 2008 

          A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots 
          Muhammad Usman, Sheikh Ahmed, Gerhard Klimeck 
          in Technical Proceedings of IEEE Nanotechnology (NANO) 2008, Arlington TX 

          Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots 
          Muhammad Usman, Hoon Ryu, Sunhee Lee, Yui M.H. Tan, and Gerhard Klimeck 
          in proceedings of 13th International Workshop on Computational Electronics (IWCE), Tsinghua University, Beijing, May 27-29 2009.

          Strain-engineered self-organised InAs/GaAs quantum dots for long wavelength applications 
          Muhammad Usman, Dragica Vasileska, and Gerhard Klimeck 
          in proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008.

          Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field 
          Shaikh Ahmed, Muhammad Usman, Clemens Heitzinger. Rajib Rahman, Andrei Schliwa, and Gerhard Klimeck 
          in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849.

          Strain and electronic structure interactions in realistically scaled quantum dot stacks 
          Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard Klimeck 
          in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg. 847.

          Performance analysis of adaptive source rate control (ASRC) algorithm for VoIP 
          Muhammad Usman and Noor M. Sheikh 
          in proceedings of IEEE TENCON 2005 conference Melbourne Australia, November 2005 Pages:1-7


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