Book Chapters: 

    1. Multimillion atom simulations with NEMO-3D       (link to Springer website here) 
        Shaikh Ahmed*, Neerav Kharche*, Rajib Rahman*, Muhammad Usman*, Sunhee Lee, ..., Timothy Boykin, and Gerhard Klimeck, (*Authors with equal contributions) 
        Book Title: Encyclopedia of Complexity and Systems Science (ISBN: 978-0-3873-0440-3); Publisher: Springer New York; Editor: Robert A. Meyers; Volume 6, pages 5745-5783, 2009. 



    2. Theory of the electronic structure of dilute bismide alloys: tight-binding and k.p models
           (link to Springer website here) 
        Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly  
        Chapter 3; Book Title: "Bismuth-containing Compounds" (ISBN: 978-1-4614-8121-8); Springer New York, Series in Materials Science; Volume 186, Pages: 55-88, 2013. 
        DOI: 10.1007/978-1-4614-8121-8_3 


    3. Size-dependent electronic and polarisation properties of multi-layer InAs quantum dot molecules       (link to Springer website here) 
        Muhammad Usman 
        Chapter 5; Book Title: "Quantum Dot Molecules" (ISBN: 978-1-4614-8129-4); Springer New York, Lecture Notes in Nanoscale Science & Technology; ; Volume 14, Pages: 149-175, 2014. 
        DOI: 10.1007/978-1-4614-8130-0_5 

         4. Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D 
             S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck, 
             (Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, 2015. [DOI: 10.1007/978-3-642-27737-5_343-2]


    Refereed Journal Articles:
     
    (Categorised in four major research topics. For year-by-year listing, please check my google scholar profile) 

  1. Shallow Donors (P, As, Sb, Bi) in Silicon for Spin Qubits and Quantum Computing Architectures

    1. Measurements and atomistic theory of electron g factor anisotropy for phosphorus donors in strained silicon
      Muhammad Usman, Hans Huebl,  Andre Stegner, Charles D Hill, Martin S Brandt, Lloyd C.L. Hollenberg 
      (APS) Physical Review B, 2018; arXiv

    2. Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
      Muhammad Usman, Benoit Voisin, Joe Salfi, Sven Rogge, Lloyd C.L. Hollenberg 
      (RSC) Nanoscale 9, 17013, 2017; arXiv

    3. Valley filtering and spatial maps of coupling between silicon donors and quantum dots
      Joe Salfi, Benoit Voisin, Archana Tankasala, Juanita Bocquel, Muhammad Usman, Michelle Y. Simmons, Lloyd C.L. Hollenberg,  Rajib Rahman, Sven Rogge

    4. Two-electron states of a group V donor in silicon from atomistic full configuration interaction
      Archana Tankasala, Joe Salfi, Juanita Bocquel, Benoit Voisin, Muhammad Usman, Gerhard Klimeck, Michelle Y. Simmons, Lloyd C.L. Hollenberg, Sven Rogge, Rajib Rahman
    5. (APS) Physical Review B, 97, 195301, 2018; arXiv

    6. Spatial metrology of dopants in silicon with exact lattice site precision
      Muhammad Usman, Juanita Bocquel, Joe Salfi, Benoit Voisin, Archana Tankasala, Rajib Rahman, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg 
      Nature Nanotechnology 11, 763-768, 2016; arXiv  [Highlighted by editor in TOC of Nature Nanotechnology September 2016 Issue]
      Related news articles at Phys.org, FuturismScienceDaily, EurekAlert!, Bharattimesnewswise, nanoUniversity of Melbourne Newsroom, UNSW News, Scimex, TechnologyOpli 

      Pinpointing qubits in a silicon quantum computer



    7. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon 
      Muhammad Usman, Charles D. Hill, Rajib Rahman, Gerhard Klimeck, Michelle Y. Simmons, Sven Rogge, Lloyd C.L. Hollenberg 
      (APS) Physical Review B 91, 245209, 2015; arXiv 
      (10+ citations as per Google Scholar)

    8. Donor hyperfine Stark shift and the role of central-cell correction in tight-binding theory 
      Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit Voisin, Sven Rogge, Gerhard Klimeck, Lloyd C.L. Hollenberg 
      INVITED Special Issue Article: (IOP) Journal of Physics: Condensed-Matter, 27, 154207, 2015; arXiv (10+ citations as per Google Scholar)
      Link to the special issue (Single Dopants in Semiconductors) is here

  2. Electronic Structure Theory and Optical Properties of Dilute Bismide Alloys and Quantum Well Laser Devices

    1. Impact of disorder on the optoelectronic properties of GaBiNAs alloys and heterostructures 
      Muhammad Usman, Christopher A. Broderick, and Eoin P. O'Reilly
    2. (APS) Physical Review Applied 2018; arXiv

    3. Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells
      Muhammad Usman 
    4. (APS) Physical Review Materials 2, 044602, 2018; arXiv

    5. Anisotropic electron g-factor as a probe of the electronic structure of GaBiAs/GaAs epilayers 
      Christopher A. Broderick, Simone Mazzucato, Helene Carrere,Thierry Amand, Hejer Makhlou.fi, Alexandre Arnoult, Chantal Fontaine, Omer Donmez, Ayse Erol, Muhammad Usman, Eoin P. O'Reilly, Xavier Marie 
      (APS) Physical Review B 90, 195301, 2014; arXiv (15+ citations as per Google Scholar)

    6. Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells 
      Muhammad Usman and Eoin P. O'Reilly 
      (AIP) Applied Physics Letters, 104, 071103, 2014; arXiv 
      (10+ citations as per Google Scholar)

    7. Impact of alloy disorder on the band structure of compressively strained GaBiAs 
      Muhammad Usman, Christopher A. Broderick, Zahida Batool, Konstanze Hild, Jeff Hosea, Stephen Sweeney, and Eoin P. O'Reilly 
      (APS) Physical Review B, 87, 115104, 2013; arXiv (50+ citations as per Google Scholar)

    8. Derivation of 12 and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors 
      Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly 
      (IOP) Semicond. Sci. Technol., 28, 125025, 2013; arXiv (45+ citations as per Google Scholar)

    9. 12-band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations 
      Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly 
      (INVITED PAPER @ E-MRS 2012)(Wiley) Physica Status Solidi (b) 250, No. 4, 773-778, 2013; arXiv (25+ citations as per Google Scholar)

    10. Band engineering in dilute nitride and bismide semiconductor Lasers 
      Christopher A. Broderick, Muhammad Usman, Stephen J. Sweeney, and Eoin P. O'Reilly 
      (INVITED REVIEW ARTICLE) (IOP) Semicond. Sci. Technol. 27, 094011 (2012); arXiv (100+ citations as per Google Scholar)
      Selected by IOP Editors as a highlighted research article of Year 2012: http://iopscience.iop.org/0268-1242/page/2012%20Highlights

    11. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs 
      Muhammad Usman, Christopher A. Broderick, Andrew Lindsay, and Eoin P. O'Reilly 
      (APS) Physical Review B 84, 245202 (2011); arXiv (150+ citations as per Google Scholar)
     
  3. Tuning of Wavelength and Polarisation of Optical Spectra from InAs Quantum Dots: Single QDs and Multi-layer Stacked Quantum Dot Molecules

    1. Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules 
      Muhammad Usman 
      (RSC) Nanoscale 7, 16516, 2015; arXiv

    2. Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarisation fields 
      Shaikh S. Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman
      (Springer) Journal of Computational Electronics, Vol. 14, Issue 2, pp 543-556, 2015;

    3. Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D 
      S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck, 
      (Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, 2015. [DOI: 10.1007/978-3-642-27737-5_343-2]

    4. Tuning of polarisation sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics 
      Vittorianna Tasco*, Muhammad Usman*, Milena De Giorgi, Adriana Passaseo - (*Authors with equal contributions) 
      (IOP) Nanotechnology, 25, 055207, 2014; arXiv

    5. Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks 
      Muhammad Usman 
      Rapid Communications: (APS) Physical Review B, 89, 081302(R), 2014; arXiv

    6. Atomistic theoretical study of electronic and polarisation properties of single and vertically-stacked elliptical InAs quantum dots 
      Muhammad Usman 
      (APS) Physical Review B 86, 155444, 2012; arXiv (10+ citations as per Google Scholar)

    7. Polarisation response in InAs QDs: Theoretical correlation between composition and electronic properties 
      Muhammad Usman, Vittorianna Tasco, Maria T. Todaro, Melina D. Giorgi, Eoin P. O'Reilly, Gerhard Klimeck, Adriana Passaseo 
      (IOP) Nanotechnology 23, 165202, (2012); arXiv (15+ citations as per Google Scholar)
      Selected by the editor to be spotlighted on nanotechweb.org website: Quantum dot model analyses the influence of intermixing and segregation effects on polarization properties 
      Spotlighted in lab/fab talk on compoundsemiconductor.net website: Multi-million atom simulations and polarisation measurements enable QD metrology

    8. Experimental and atomistic theoretical study of degree of polarisation from multilayer InAs/GaAs quantum dot stacks 
      Muhammad Usman, Tomoya Inoue, Yukihiro Harda, Gerhard Klimeck, and Takashi Kita 
      (APS) Physical Review B 84, 115321 (2011); arXiv 
      (35+ citations as per Google Scholar)

    9. In-plane polarisation anisotropy of ground state optical intensity in InAs/GaAs quantum dots 
      Muhammad Usman 
      (AIP) Journal of Applied Physics 110, 094512, (2011) (15+ citations as per Google Scholar)

    10. Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) 
      Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck 
      (AIP) J. of Applied Physics 109, 104510 (2011); arXiv (25+ citations as per Google Scholar)

    11. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations 
      Muhammad Usman*, Yui H.M. Tan*, Hoon Ryu, Sheikh Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck - (*Authors with equal contributions) 
      (IOP) Nanotechnology 22, 315709 (2011); arXiv (25+ citations as per Google Scholar)
      Highlighted on nanotechweb as Editor's chioce: Supercomputers model real-world quantum dot devices atom-by-atom

    12. Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data 
      Muhammad Usman, Hoon Ryu, Insoo Woo, David Ebert, Gerhard Klimeck 
      IEEE Transactions on Nanotechnology, Vol. 8, No. 3, (2009); arXiv (50+ citations as per Google Scholar)

    13. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D Part II: Applications 
      Gerhard Klimeck, Sheikh Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, Marta Parda, and Timothy Boykin 
      (INVITED ARTICLE) IEEE Transactions on Electron Devices, Vol. 54, No. 9, 2090-2099, (2007) (110+ citations as per Google Scholar)

    14. Atomistic Simulation of Non-Degeneracy and Optical Polarisation Anisotropy in Pyramidal Quantum Dots 
      Sheikh Ahmed, Muhammad Usman, Rajib Rahman, Andrei Schliwa, Gerhard Klimeck 
      in Technical Proceedings of IEEE Nano/Micro Engineered and Molecular Systems (NEMS) 2008 

    15. A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots 
      Muhammad Usman, Sheikh Ahmed, Gerhard Klimeck 
      in Technical Proceedings of IEEE Nanotechnology (NANO) 2008, Arlington TX 


  4. Methods for Bibliometric Analysis of a Journal: Studying the Influence of a Journal on a Discipline

    1. Analysis of the influence of IJEEE on electrical engineering and electrical engineering education 
      Sadia Nawaz, Muhammad Usman, and Johannes Strobel 
      International Journal of Electrical Engineering Education (IJEEE), 50th Anniversary Special Issue, Vol. 50, No. 3, Pages: 316-340, 2013, Manchester University Press. 

    Refereed Conference Proceedings Papers: 

    1. Electrically Injected GaAsBi Quantum Well Lasers 
      SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, L Natterman, Z Bushell, W Stolz, K Volz, CA Broderick, M Usman, PE Harnedy, EP OReilly, R Butkute, V Pacebutas, A Geiutis, A Krotkus 
      in proceedings of 24th International Semiconductor Laser Conference (ISLC), September 2014, Melia Palas Atenea, Palma de Mallorca, Spain.

    2. Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models 
      Muhammad Usman, Christopher A. Broderick, Eoin P. O'Reilly
      in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.

    3. Understanding polarisation properties of InAs QDs by atomistic modeling of growth dynamics 
      Vittorianna Tasco, Muhammad Usman, Maria T. Todaro, M. De Giorgi, and Adriana Passaseo 
      in proceedings of 31st International Conference on the Physics of Semiconductors (ICPS), July 29 - August 2012, ETH Zurich, Switzerland.

    4. Tight Binding Analysis of the Electronic Structure of Dilute Bismide and Nitride Alloys of GaAs 
      Christopher A. Broderick, Muhammad Usman, Andrew Lindsay, and Eoin P. O'Reilly 
      in proceedings of 13th IEEE International Conference on Transparent Optical Networks (ICTON), June 26-30, 2011, KTH Stockholm, Sweden;

    5. Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots 
      Muhammad Usman, Hoon Ryu, Sunhee Lee, Yui M.H. Tan, and Gerhard Klimeck 
      in proceedings of 13th International Workshop on Computational Electronics (IWCE), Tsinghua University, Beijing, May 27-29 2009.

    6. Strain-engineered self-organised InAs/GaAs quantum dots for long wavelength applications 
      Muhammad Usman, Dragica Vasileska, and Gerhard Klimeck 
      in proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008.

    7. Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field 
      Shaikh Ahmed, Muhammad Usman, Clemens Heitzinger. Rajib Rahman, Andrei Schliwa, and Gerhard Klimeck 
      in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849.

    8. Strain and electronic structure interactions in realistically scaled quantum dot stacks 
      Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard Klimeck 
      in proceedings of 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg. 847.

    9. Performance analysis of adaptive source rate control (ASRC) algorithm for VoIP 
      Muhammad Usman and Noor M. Sheikh 
      in proceedings of IEEE TENCON 2005 conference Melbourne Australia, November 2005 Pages:1-7


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