Patent:
" Quantum Computer Arrays ", Lloyd Hollenberg, Charles Hill, and Muhammad Usman, patent # 2018903094,
2018.
Book Chapters:
1. Multimillion atom simulations with NEMO-3D (link to Springer website here) (*Authors with equal contributions) Theory of the electronic structure of dilute bismide alloys: tight-binding and k.p models (link to Springer website here) Christopher A. Broderick, Muhammad Usman, and Eoin P. O'Reilly Chapter 3; Book Title: "Bismuth-containing Compounds" (ISBN: 978-1-4614-8121-8); Springer New York, Series in Materials Science; Volume 186, Pages: 55-88, 2013. DOI: 10.1007/978-1-4614-8121-8_3 3. Size-dependent electronic and polarisation properties of multi-layer InAs quantum dot molecules (link to Springer website here) Muhammad Usman Chapter 5; Book Title: "Quantum Dot Molecules" (ISBN: 978-1-4614-8129-4); Springer New York, Lecture Notes in Nanoscale Science & Technology; ; Volume 14, Pages: 149-175, 2014. DOI: 10.1007/978-1-4614-8130-0_5
4. Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D
S. Ahmed, N. Kharche, R. Rahman, M. Usman, S. Lee, H. Ryu, H. Bae, S. Clark, B. Haley, M. Naumov, F. Saied, M. Korkusinski, R. Kennel, M. McLennan, T. Boykin, and G. Klimeck,
(Springer Berlin Heidelberg) Encyclopedia of Complexity and Systems Science, pp. 1-69, 2015. [DOI: 10.1007/978-3-642-27737-5_343-2]
Refereed Journal Articles: (Categorised in four major research topics. For year-by-year listing, please check my google scholar profile) Shallow Donors (P, As, Sb, Bi) in Silicon for Spin Qubits and Quantum Computing Architectures Visualising valley interference to engineer robust donor qubit coupling in silicon
*(Equal contribution authors, listed alphabetically) Measurements and atomistic theory of electron g factor anisotropy for phosphorus donors in strained silicon arXiv Valley filtering and spatial maps of coupling between silicon donors and quantum dots arXiv Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon arXiv Two-electron states of a group V donor in silicon from atomistic full configuration interaction (APS) Physical Review B, 97, 195301, 2018; arXiv Spatial metrology of dopants in silicon with exact lattice site precision arXiv [Highlighted by editor in TOC of Nature Nanotechnology September 2016 Issue]Phys.org , Futurism , ScienceDaily , EurekAlert! , Bharattimes , newswise , nano , University of Melbourne Newsroom , UNSW News , Scimex , Technology , Opli
Pinpointing qubits in a silicon quantum computer VIDEO
Strain and electric field control of hyperfine interactions for donor spin qubits in silicon arXiv (10+ citations as per Google Scholar) Donor hyperfine Stark shift and the role of central-cell correction in tight-binding theory INVITED Special Issue Article: (IOP) Journal of Physics: Condensed-Matter, 27, 154207, 2015; arXiv (10+ citations as per Google Scholar) Link to the special issue (Single Dopants in Semiconductors) is here Electronic and Optoelectronic Properties of Dilute Bismide Materials/Nanostructures and other Highly -mismatched alloys Unusual band-gap bowing in highly mismatched ZnOS alloy: Atomistic tight-binding band anti-crossing model Atomistic tight binding study of Quantum Confined Stark Effect in GaBiAs/GaAs Quantum Wells (APS) Physical Review Applied 2019; Impact of disorder on the optoelectronic properties of GaBiNAs alloys and heterostructures (APS) Physical Review Applied 10, 044024, 2018; arXiv Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells (APS) Physical Review Materials 2, 044602, 2018; arXiv Anisotropic electron g-factor as a probe of the electronic structure of GaBiAs/GaAs epilayers arXiv (15+ citations as per Google Scholar) Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells arXiv (10+ citations as per Google Scholar) Impact of alloy disorder on the band structure of compressively strained GaBiAs arXiv (50+ citations as per Google Scholar) Derivation of 12 and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors arXiv (45+ citations as per Google Scholar) 12-band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations (INVITED PAPER @ E-MRS 2012) (Wiley) Physica Status Solidi (b) 250, No. 4, 773-778, 2013; arXiv (25+ citations as per Google Scholar) Band engineering in dilute nitride and bismide semiconductor Lasers (INVITED REVIEW ARTICLE) (IOP) Semicond. Sci. Technol. 27, 094011 (2012); arXiv (100+ citations as per Google Scholar) Selected by IOP Editors as a highlighted research article of Year 2012: http://iopscience.iop.org/0268-1242/page/2012%20Highlights Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs arXiv (150+ citations as per Google Scholar)
Tuning of Wavelength and Polarisation of Optical Spectra from InAs Quantum Dots: Single QDs and Multi-layer Stacked Quantum Dot Molecules Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules arXiv Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarisation fields Multimillion Atom Simulations of Electronic and Optical Properties of Nanoscale Devices using NEMO-3D Tuning of polarisation sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics (*Authors with equal contributions) arXiv Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks Rapid Communications: (APS) Physical Review B, 89, 081302(R), 2014; arXiv Atomistic theoretical study of electronic and polarisation properties of single and vertically-stacked elliptical InAs quantum dots arXiv (10+ citations as per Google Scholar) Polarisation response in InAs QDs: Theoretical correlation between composition and electronic properties arXiv (15+ citations as per Google Scholar) Selected by the editor to be spotlighted on nanotechweb.org website: Quantum dot model analyses the influence of intermixing and segregation effects on polarization properties Spotlighted in lab/fab talk on compoundsemiconductor.net website: Multi-million atom simulations and polarisation measurements enable QD metrology Experimental and atomistic theoretical study of degree of polarisation from multilayer InAs/GaAs quantum dot stacks arXiv (35+ citations as per Google Scholar) In-plane polarisation anisotropy of ground state optical intensity in InAs/GaAs quantum dots (15+ citations as per Google Scholar) Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) arXiv (25+ citations as per Google Scholar) Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations (*Authors with equal contributions) arXiv (25+ citations as per Google Scholar) Highlighted on nanotechweb as Editor's chioce: Supercomputers model real-world quantum dot devices atom-by-atom Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data arXiv (50+ citations as per Google Scholar) Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D Part II: Applications (INVITED ARTICLE) IEEE Transactions on Electron Devices, Vol. 54, No. 9, 2090-2099, (2007) (110+ citations as per Google Scholar)
Atomistic Simulation of Non-Degeneracy and Optical Polarisation Anisotropy in Pyramidal Quantum Dots A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots Methods for Bibliometric Analysis of a Journal: Studying the Influence of a Journal on a Discipline Analysis of the influence of IJEEE on electrical engineering and electrical engineering education Refereed Conference Proceedings Papers:
Electrically Injected GaAsBi Quantum Well Lasers Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models Understanding polarisation properties of InAs QDs by atomistic modeling of growth dynamics Tight Binding Analysis of the Electronic Structure of Dilute Bismide and Nitride Alloys of GaAs Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots Strain-engineered self-organised InAs/GaAs quantum dots for long wavelength applications Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field Strain and electronic structure interactions in realistically scaled quantum dot stacks Performance analysis of adaptive source rate control (ASRC) algorithm for VoIP
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