Exact atom spatial metrology of dopants in silicon (Related paper here)

A scanning tunneling microscope image showing structure inside the Bohr radius of the wave function of a single electron bound to a phosphorus atom in silicon. Understanding the quantum properties of this system is increasingly important in areas such as ultra-scaled electronics and quantum computing. The electron’s quantum wave function behaves like a hydrogen-like system, but with a Bohr radius of ~2nm it encompasses many atoms in the silicon crystal giving these images rich atomic-level structure. We have used multi-million atom simulations to quantitatively understand the atomic detail in these images with sufficient precision to directly pin-point the exact lattice site location of the donor atom itself.

Strain around the donor-Si qubit may boost the speed of quantum computer (Related paper here)

In-Ga intermixing effects during growth dynamics of tri-layer QD stacks (Related paper here)

Alloy disorder effects in GaBiAs (Related paper here)

Electronic Structure Evolution in GaBiNAs Alloys (Related paper here)

12 and 14 band k.p Hamiltonians for GaBiAs and GaBiNAs materials (Related paper here

Theoretical correlation between quantum dot structural parameters and its polarisation properties (Full paper here)

Novel dilute Bismide alloys for low loss optical devices (Full paper here) (Talk presented at 2011 Bismuth Workshop)

Polarisation response of multi-layer QD stacks (Full paper here) (Audio presentation here)

Wavelength tuning of InAs QDs by InGaAs QWells (Full paper here) (Audio presentation here)

Coherent control of excitons in QD bilayers by external electric fields (Full paper here)

Comparison of polarisation response of single QDs with QD Bilayers (Full paper here)

Atomic and molecular electronic states in a bilayer QD stack (Full paper here)

Symmetry Breaking and Polarisation Anisotropy in Pyramidal InAs Quantum Dots (Full paper here